Search results for "Band bending"
showing 10 items of 10 documents
Hall effect and electronic structure of films
2010
Abstract Tunneling experiments have shown that in order to retain half-metallicity at room temperature not only a large gap is required but also a Fermi energy considerably distant from the minority band edges. We correlate the position of the Fermi energy in the spin minority gap obtained from band structure calculations to Hall effect experiments. As a model system we chose Co 2 Fe x Mn 1 - x Si , where the Fermi energy was calculated to move from the valence band edge of the minority states to the conduction band edge with increasing x . On high quality laser ablated epitaxial films we observe a sign change of both the normal and the anomalous Hall effect with doping. The experimental da…
Enhancement of Electronic and Optical Properties of ZnO/Al2O3 Nanolaminate Coated Electrospun Nanofibers
2016
International audience; Nanolaminates are new class of promising nanomaterials with outstanding properties. Here we explored on the tuning of structural properties and the enhancement of electronic and optical properties of 1D PAN ZnO/Al2O3 nanolaminates designed by atomic layer deposition (ALD) and electrospinning. The influence of ZnO/Al2O3 bilayer thicknesses on the fundamental properties of 1D PAN ZnO/Al2O3 nanolaminates has been investigated. Due to the quantum confinement effect, the shift of XPS peaks to higher energies has been observed. Work function of Al2O3 was mostly independent of the bilayers number, whereas the ZnO work function decreased with an increase of the bilayer numbe…
Effects of Nid-levels on the electronic band structure of NixCd1-xO semiconducting alloys
2017
NixCd1-xO has a ∼3 eV band edge offset and bandgap varying from 2.2 to 3.6 eV, which is potentially important for transparent electronic and photovoltaic applications. We present a systematic study of the electronic band structure of NixCd1-xO alloys across the composition range. Ion irradiation of alloy samples leads to a saturation of the electron concentration associated with pinning of the Fermi level (EF) at the Fermi stabilization energy, the common energy reference located at 4.9 eV below the vacuum level. The composition dependence of the pinned EF allows determination of the conduction band minimum (CBM) energy relative to the vacuum level. The unusually strong deviation of the CBM…
Low-temperature growth of n ++-GaN by metalorganic chemical vapor deposition to achieve low-resistivity tunnel junctions on blue light emitting diodes
2018
We report on low-resistivity GaN tunnel junctions (TJ) on blue light-emitting diodes (LEDs). Si-doped n ++-GaN layers are grown by metalorganic chemical vapor deposition directly on LED epiwafers. Low growth temperature (<800 °C) was used to hinder Mg-passivation by hydrogen in the p ++-GaN top surface. This allows achieving low-resistivity TJs without the need for post-growth Mg activation. TJs are further improved by inserting a 5 nm thick In0.15Ga0.85N interlayer (IL) within the GaN TJ thanks to piezoelectric polarization induced band bending. Eventually, the impact of InGaN IL on the internal quantum efficiency of blue LEDs is discussed.
Manipulation of charge transfer and transport in plasmonic-ferroelectric hybrids for photoelectrochemical applications
2016
Utilizing plasmonic nanostructures for efficient and flexible conversion of solar energy into electricity or fuel presents a new paradigm in photovoltaics and photoelectrochemistry research. In a conventional photoelectrochemical cell, consisting of a plasmonic structure in contact with a semiconductor, the type of photoelectrochemical reaction is determined by the band bending at the semiconductor/electrolyte interface. The nature of the reaction is thus hard to tune. Here instead of using a semiconductor, we employed a ferroelectric material, Pb(Zr,Ti)O3 (PZT). By depositing gold nanoparticle arrays and PZT films on ITO substrates, and studying the photocurrent as well as the femtosecond …
Evidence of Band Bending Induced by Hole Trapping at MAPbI3 Perovskite / Metal Interface
2016
International audience; Electron injection by tunneling from a gold electrode and hole transport properties in polycrystalline MAPbI3 has been investigated using variable temperature experiments and numerical simulations. The presence of a large and unexpected band bending at the Au/MAPbI3 interface is revealed and attributed to the trapping of holes, which enhances the injection of electrons via tunneling. These results elucidate the role of volume and interface defects in state-of-the-art hybrid perovskite semiconductors.
Noble metal nanoparticles in organic matrix
2020
Abstract The purpose of this work is the synthesis and study of the properties of nanocomposite structures created by noble metal (silver) nanoparticles (NP's), an exciting class of materials with unique properties differ from both bulk and atomic behavior, which are self-organize in a thin organic film of copper phthalocyanine (CuPc). The structure and morphology of this material, depending on the amount of deposited silver, was studied in ultrahigh vacuum using transmission electron microscopy (TEM) and photoelectron spectroscopy (PES). Metallic atoms deposited on the surface of an organic substrate diffuse into the substrate, forming NPs with a narrow size distribution, which correlates …
B7.3 - Field Effect SnO2 Nano-Thin Film Layer CMOS-Compatible
2009
The integration of metal oxide gas sensing layers into CMOS electronic still a challenge especially due to the high operating temperatures that do not comply with silicon transistor limits , even more critical, and metal oxide annealing temperatures. External electric fields will allow control over the energy levels of the sensing layer and thus over adsorption sensitivity, consequently the interaction between gas and sensitive layer is modulated. As the absorbed gas on the surface produces a band bending, it changes conduction paths allowing gas detection through resistance measurements. With this configuration, field switch offers fast desorption and thus handling of low temperature respo…
Photoluminescence transient study of surface defects in ZnO nanorods grown by chemical bath deposition
2015
Two deep level defects (2.25 and 2.03 eV) associated with oxygen vacancies (Vo) were identified in ZnO nanorods (NRs) grown by low cost chemical bath deposition. A transient behaviour in the photoluminescence (PL) intensity of the two Vo states was found to be sensitive to the ambient environment and to NR post-growth treatment. The largest transient was found in samples dried on a hot plate with a PL intensity decay time, in air only, of 23 and 80 s for the 2.25 and 2.03 eV peaks, respectively. Resistance measurements under UV exposure exhibited a transient behaviour in full agreement with the PL transient, indicating a clear role of atmospheric O-2 on the surface defect states. A model fo…
<title>Spin-polarized electron kinetics under high-intensity picosecond excitation</title>
2003
ABSTRACT Spin-polarized electron kinetics is studied by time-resolved polarized photoemission with picosecond resolution. The re-sponse time of strained layer photocathodes is found to be in a range of a few picosecond offering an ultrafast response andhigh spin-polarization of emitted electrons. The studies of the sub-picosecond spin dynamics are facilitated in high-intensityexcitation regime when the length of the emission pulse is enlarged due to the dispersion of acceleration time and Coulombrepulsion ofthe electrons in their flight in the vacuum.Keywords: optical orientation, spin kinetics, strained semiconductor layer, time-resolved emission. 1. INTRODUCTION GaAs, layers are known to …